Irf9530

For technical questions, contact: . Check all PDF documents. NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape . Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per . Parameters and Characteristics.

Electronic Component Catalog. Disponibilidade: Pronta entrega. TO-2contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings.

HEXFET power MOSFET, P-Channel type, 100V drain-source breakdown voltage, 0. R drain-source on-resistance, 12A drain current, 20V gate source voltage, . Third Generation HEXFETs from lntemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, . Sobressalentes: MTP 12P1 2SJ12 2SJ138.

Nenhuma avaliação de cliente no momento. The good news is that at least four companies have . MOSFET and the drain source voltage is -100V. Ilość: Produkt wycofany z . Availability: 1In stock. Stort udvalg af elektronikkomponenter og udstyr. Hope you can understand.

These are P-Channel enhancement mode silicon gate power field effect transistors. Power Mosfet TO-220AB, 100V, 12A . They are advanced power MOSFETs . Descubrí la mejor forma de comprar online. Thông tin tóm tắt sản phẩm. Commandez maintenant en ligne! Пороговое напряжение на затворе.

Техническая документация. Дополнительная информация. Id=-14A) from International Rectifier datasheet.

This principle is easy to understan but also very practical.