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Irf9540

Check all PDF documents. NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape . It has maximum VDSS rated at -100V and can handle continuous drain current . Parameters and Characteristics.

Electronic Component Catalog. P-channel Power MOSFET,100V, 23A, 140W, 0. NCNR (Non-Cancelable, Non Returnable). Continuous Current = Amps. Pulsed Current = Amps. Designed for operation with motors, relays, switching regulators, IGBT and more.

Amazon Pay balance only and get Rs. These are P-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designe teste and guaranteed to . Rockford 451s amplifier output stage. Datasheet (data sheet) search for integrated . Explore Discrete Semiconductors on Octopart: the fastest source for datasheets, pricing, specs and availability. Category: ELECTRONIC COMPONENTS.

The intensity able to pass through the mosfet is . HEXFET P-Channel Power MOSFET. We will send payment cleared orders out of our facility . Operating temperature: – to . Transistor, P Channel MOSFET. Available We dispatch same day if ordered by 4PM . MOSFET and the drain source voltage is -100V. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low . Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified. Package: TO-220AB, 1-gate, 2-drain, – sourse, 4-drain.

There are several errors in your Proteus simulation:- The LOG pots you have chosen for RV RVand RVdo not appear to work. These are P- Channel enhancement mode silicon gate power field effect transistors.

Please publish modules in . All components in the community library are user created. Uds: 1V, Idss: A, Pd: 1W, Rds: Ohm Unipolární tranzistor P-Kanál, Provedení: Vývodové, Idss = A, Vds = 1V, Pd = 1W, Rds = Ohm, . Brand name (s) : International Rectifier Image for illustrative purpose only. Item sold as the individual pi.

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